The POU3500 process delivers dynamic temperature Charge of the process chamber cathode / electrode / anode and might be synchronized with any etch course of action.
Resource & TCU application calibration methods vary exterior examination devices not used on a regular basis for verifying
the knowledge below is categorized by semiconductor process and Device producer. Just about every table incorporates an Applications Matrix that exhibits qulified and professional processes.
initially founded in 1985, our firm has grown into a identified leader in supplying temperature Manage techniques to the global semiconductor market.
This remarkable technique, featuring a small variety aspect, low priced-of-Ownership and Dynamic Temperature Control provided course of action and gear engineers a fresh Software to improve their temperature sensitive processes.
The precision from the POU 3300 allows for impartial control of the process fluid temperature to your wafer chuck in just +/- 0.1 °C of established point, plus the quickly reaction time of the process permits for max wafer-to-wafer repeatability throughout here the etch procedure.
The precision in the POU 3500 permits impartial Charge of the process fluid temperature for the wafer chuck within just +/- 0.1 °C of established position, as well as quickly reaction time of your system allows for optimum wafer-to-wafer repeatability all through the etch approach.
With the POU3300, you'll be able to attain unparalleled brings about etch overall performance, chamber uptime, minimized price of ownership and fab Area utilization – all while strengthening your method reliability.
the information pertains to a 300mm chamber temperature profile during a substantial facet ratio Etch course of action, functioning at pretty significant RF electrical power disorders (~three.8kW). The compelling components of this facts set are:
Dynamic Temperature Command, as executed in units similar to the LAUDA-Noah POU, is an strategy that senses the temperature of the method fluid returning from the procedure chamber’s wafer chuck (ESC) and dynamically adjusts the temperature on the provided procedure fluid dependant on this actual-time feedback.
the information established here is from a 200mm volume output wafer fab and Plainly illustrates the good thing about the LAUDA-Noah POU program.
greater than at any time, shrinking machine geometries, demanding new processes and a extremely aggressive atmosphere involve temperature Regulate programs that Blend rapid and accurate temperature control with the emphasis on minimized functioning costs and improved trustworthiness.
The reality is the fact that true Dynamic Temperature Command can only be attained when all five (5) of the following process design and style and set up needs are achieved:
(Therefore, putting in a static device beside chamber will likely not empower it to provide dynamic temperature Management)
We demand much less cooling/heating potential for the same software as being a static TCU as a result of our smaller reservoir volume.